ntgd4167c power mosfet complementary, 30 v, +2.9/ ? 2.2 a, tsop ? 6 dual features ? complementary n ? channel and p ? channel mosfet ? small size (3 x 3 mm) dual tsop ? 6 package ? leading edge trench technology for low on resistance ? reduced gate charge to improve switching response ? independently connected devices to provide design flexibility ? this is a pb ? free device applications ? dc ? dc conversion circuits ? load/power switching with level shift maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain ? to ? source voltage v dss 30 v gate ? to ? source voltage (n ? ch & p ? ch) v gs 12 v n ? channel continuous drain current (note 1) steady state t a = 25 c t a = 85 c i d 2.6 1.9 a t 5 s t a = 25 c 2.9 p ? channel continuous drain current (note 1) steady state t a = 25 c t a = 85 c i d ? 1.9 ? 1.4 a t 5 s t a = 25 c ? 2.2 power dissipation (note 1) steady state t a = 25 c p d 0.9 w t 5 s 1.1 pulsed drain current n ? ch t p = 10 s i dm 8.6 a p ? ch ? 6.3 operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) i s 0.9 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c thermal resistance ratings parameter symbol value unit junction ? to ? ambient ? steady state (note 1) r ja 140 c/w junction ? to ? ambient ? t 5 s (note 1) r ja 110 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). 1 2 3 6 5 4 g1 s2 g2 d1 s1 d2 g2 s2 p ? channel mosfet d2 ta = specific device code m = date code = pb ? free package tsop ? 6 case 318g style 13 marking diagram (top view) pin connection n ? ch 30 v 125 m @ 2.5 v 90 m @ 4.5 v r ds(on) max 2.6 a i d max (note 1) v (br)dss 170 m @ ? 4.5 v 300 m @ ? 2.5 v g1 s1 n ? channel mosfet d1 p ? ch ? 30 v ? 1.9 a ta m 1 1 2.2 a ? 1.0 a (note: microdot may be in either location) smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 3
electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol n/p test conditions min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss n v gs = 0 v i d = 250 a 30 v p i d = ? 250 a ? 30 drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j n 21.4 mv/ c p 22.2 zero gate voltage drain current i dss n v gs = 0 v, v ds = 24 v t j = 25 c 1.0 a p v gs = 0 v, v ds = ? 24 v ? 1.0 n v gs = 0 v, v ds = 24 v t j = 85 c 10 p v gs = 0 v, v ds = ? 24 v ? 10 gate ? to ? source leakage current i gss n v ds = 0 v, v gs = 12 v 100 na p v ds = 0 v, v gs = 12 v 100 on characteristics (note 2) gate threshold voltage v gs(th) n v gs = v ds i d = 250 a 0.5 0.9 1.5 v p i d = ? 250 a ? 0.5 ? 1.1 ? 1.5 drain ? to ? source on resistance r ds(on) n v gs = 4.5 v , i d = 2.6 a 52 90 m v gs = 2.5 v , i d = 2.2 a 67 125 p v gs = ? 4.5 v , i d = ? 1.9 a 130 170 v gs = ? 2.5 v, i d = ? 1.0 a 202 300 forward transconductance g fs n v ds = 15 v, i d = 2.6 a 2.6 s p v ds = ? 15 v , i d = ? 1.9 a 2.6 charges and capacitances input capacitance c iss n f = 1 mhz, v gs = 0 v v ds = 15 v 295 pf output capacitance c oss 48 reverse transfer capacitance c rss 27 input capacitance c iss p v ds = ? 15 v 419 output capacitance c oss 51 reverse transfer capacitance c rss 26 total gate charge q g(tot) n v gs = 4.5 v, v ds = 15 v, i d = 2.0 a 3.7 5.5 nc threshold gate charge q g(th) 0.6 gate ? to ? source gate charge q gs 0.9 gate ? to ? drain ?miller? charge q gd 0.8 total gate charge q g(tot) p v gs = ? 4.5 v, v ds = ? 15 v, i d = ? 2.0 a 3.9 6.0 threshold gate charge q g(th) 0.6 gate ? to ? source gate charge q gs 1.0 gate ? to ? drain ?miller? charge q gd 1.0 switching characteristics (note 3) turn ? on delay time t d(on) n v gs = 4.5 v, v dd = 15 v, i d = 1.0 a, r g = 6.0 7.0 ns rise time t r 4.0 turn ? off delay time t d(off) 14 fall time t f 2.0 turn ? on delay time t d(on) p v gs = ? 4.5 v, v dd = ? 15 v, i d = ? 1.0 a, r g = 6.0 8.0 rise time t r 8.0 turn ? off delay time t d(off) 22 fall time t f 8.0 2. pulse test: pulse width 300 s, duty cycle 2%. ntgd4167c smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 3
3. switching characteristics are independent of operating junction temperatures. electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol n/p test conditions min typ max unit drain ? source diode characteristics forward diode voltage v sd n v gs = 0 v, t j = 25 c i s = 0.9 a 0.7 1.2 v p i s = ? 0.9 a ? 0.8 ? 1.2 reverse recovery time t rr n v gs = 0 v, di s / dt = 100 a/ s, i s = 0.9 a 8.0 ns charge time t a 5.0 discharge time t b 3.0 reverse recovery charge q rr 3.0 nc reverse recovery time t rr p v gs = 0 v, di s / dt = 100 a/ s, i s = ? 0.9 a 12 ns charge time t a 10 discharge time t b 2.0 reverse recovery charge q rr 7.0 nc ntgd4167c smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 3 of 3
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